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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1380
*
DESCRIPTION *With TO-126 package *Complement to type 2SB1009 *Low collector saturation voltage APPLICATIONS *For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 40 32 5 2 10 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50A ;IE=0 IE=50A ;IC=0 IC=2.0A; IB=0.2A VCB=20V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=-0.5A ; VCE=5V IE=0; f=1MHz ; VCB=10V 82 100 30 MIN 32 40 5 0.5
2SD1380
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT COB
TYP.
MAX
UNIT V V V
0.8 1 1 390
V A A
MHz pF
hFE Classifications P 82-180 Q 120-270 R 180-390
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1380
Fig.2 Outline dimensions
3

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